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| CoolMOSTM Power MOSFET IXKC 20N60C in ISOPLUS220TM Package Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS(on), Superjunction MOSFET Preliminary Data Sheet VDSS = 600 V ID25 = 14 A RDS(on) = 190 m Symbol VDSS VGS ID25 ID90 ID(RMS) EAS EAR PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25C to 150C Continuous TC = 25C; Note 1 TC = 90C, Note 1 Package lead current limit Io Io = 10A, TC = 25C = 20A Maximum Ratings 600 20 14 10 45 690 1 125 -55 ... +150 150 -55 ... +125 V V A A A mJ mJ W C C C C V~ ISOPLUS 220LVTM E153432 G D S Isolated back surface* D = Drain, G = Gate, S = Source * Patent pending TC = 25C Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation 3RD generation CoolMOS power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) Low thermal resistance due to reduced chip thickness Low drain to tab capacitance(<30pF) Applications 1.6 mm (0.062 in.) from case for 10 s RMS leads-to-tab, 50/60 Hz, t = 1 minute Mounting force 300 2500 11 ... 65 / 2.4 ...11 N/lb 3 g Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 160 463 3.5 TJ = 25C TJ = 125C 10 100 190 m m 5.5 1 V A A nA RDS(on) VGS(th) IDSS IGSS VGS = 10 V, ID = ID90, Note 3 VGS = 10 V, ID = ID90, Note 3 TJ = 125C VDS = VGS, ID = 1 mA VDS = VDSS VGS = 0 V VGS = 20 VDC, VDS = 0 Switched Mode Power Supplies (SMPS) Uninterruptible Power Supplies (UPS) Power Factor Correction (PFC) Welding Inductive Heating Advantages Easy assembly: no screws or isolation foils required Space savings High power density CooLMOS is a trademark of Infineon Technologies, AG (c) 2004 IXYS All rights reserved DS98848C(1/04) IXKC 20N60C Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 79 VGS = 10 V, VDS = 350 V, ID = 20 A 21 46 20 VGS = 10 V, VDS = 380V ID = 20 A, RG = 3.3 55 60 10 1 0.30 nC nC nC ns ns ns ns K/W K/W TO-220LV Outline Qg(on) Qgs Qgd td(on) tr td(off) tf RthJC RthCH Reverse Conduction Symbol VSD Test Conditions IF = 10 A, VGS = 0 V Note 3 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 0.8 1.2 V Note: 1. MOSFET chip capability 2. Intrinsic diode capability 3. Pulse test, t 300 s, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 6,404,065B1 6,259,123B1 6,162,665 6,306,728B1 6,534,343 |
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